Size tunable visible and near-infrared photoluminescence from vertically etched silicon quantum dots
Abstract
Corrugated etching techniques were used to fabricate size-tunable silicon quantum dots that luminesce under photoexcitation, tunable over the visible and near infrared. By using the fidelity of lithographic patterning and strain limited, self-terminating oxidation, uniform arrays of pillar containing stacked quantum dots as small as 2 nm were patterned. Furthermore, an array of pillars, with multiple similar sized quantum dots on each pillar, was fabricated and tested. The photoluminescence displayed a multiple, closely peaked emission spectra corresponding to quantum dots with a narrow size distribution. Similar structures can provide quantum confinement effects for future nanophotonic and nanoelectronic devices.
Additional Information
© 2011 American Institute of Physics. Received 31 January 2011; accepted 31 March 2011; published online 14 April 2011. S. Walavalkar would like to thank Erika Garcia as well as Professor Tom Tombrello and Ryan Briggs for useful discussion. We would also like to gratefully acknowledge the Boeing corporation under the CT-BA-GTA-1 grant, the Advanced Energy Consortium under the BEG10-07 grant, and DARPA for generous support under the NACHOS Grant No. W911NF-07-1-0277 program. A. Homyk would like to thank the ARCS foundation for their support. M. D. Henry would like to thank the John and Fannie Hertz Foundation for their funding.Attached Files
Published - Walavalkar2011p13692Appl_Phys_Lett.pdf
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Additional details
- Eprint ID
- 23534
- Resolver ID
- CaltechAUTHORS:20110503-134956468
- Boeing Corporation
- CT-BA-GTA-1
- Advanced Energy Consortium
- BEG10-07
- Defense Advanced Research Projects Agency (DARPA)
- W911NF-07-1-0277
- Fannie and John Hertz Foundation
- ARCS Foundation
- Created
-
2011-05-03Created from EPrint's datestamp field
- Updated
-
2021-11-09Created from EPrint's last_modified field
- Caltech groups
- Kavli Nanoscience Institute