Published October 1, 1985
| public
Journal Article
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Theory of gain, modulation response, and spectral linewidth in AlGaAs quantum well lasers
- Creators
- Arakawa, Yasuhiko
- Yariv, Amnon
Chicago
Abstract
We investigate theoretically a number of important issues related to the performance of AlGaAs quantum well (QW) semiconductor lasers. These include a basic derivation of the laser gain, the linewidth enhancement factor α, and the differential gain constant in single and multiple QW structures. The results reveal the existence of gain saturation with current in structures with a small number of wells. They also point to a possible two-fold increase in modulation bandwidth and a ten-fold decrease in the spectral laser linewidth in a thin QW laser compared to a conventional double heterostructure laser.
Additional Information
© Copyright 1985 IEEE. Reprinted with permission. Manuscript received February 8, 1985; revised May 13, 1985. This work was supported by the Air Force Office of Scientific Research, the Office of Naval Research, the ITT Corporation, and the Japan Society for Promotion of Science.Files
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Additional details
- Eprint ID
- 8745
- Resolver ID
- CaltechAUTHORS:ARAieeejqe85
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2007-09-12Created from EPrint's datestamp field
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2019-10-02Created from EPrint's last_modified field