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Published April 15, 1980 | public
Journal Article Open

Whispering gallery lasers on semi-insulating GaAs substrates


Double heterostructure lasers are described in which light is guided by total internal reflection along a dielectric interface formed by the perimeter of an etched mesa. By means of the crowding effect, injection current is restricted to a narrow strip adjacent to the edge of the mesa. This results in the preferential excitation of optical modes which are localized in the vicinity of the dielectric interface. Both half-ring lasers formed at a single cleaved facet and quarter-ring lasers formed at a cleaved corner were fabricated.

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Copyright © 1980 American Institute of Physics Received 14 January 1980; accepted for publication 4 February 1980 Research supported by the Office of Naval Research and the National Science Foundation.


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