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Published June 1995 | Published
Book Section - Chapter Open

Gain and Stability Models for HBT Grid Amplifiers


A 16-element heterojunction bipolar transistor (HBT) grid amplifier has been fabricated with a peak gain of 11 dB at 9.9 GHz with a 3-dB bandwidth of 350 MHz. We report a gain analysis model for the grid and give a comparison of the measurement and theory. The measured patterns show the evidence of a common-mode oscillation. A stability model for the common-mode oscillation is developed. Based on the stability model, a lumped capacitor gives suitable phase shift of the circular function, thus stabilizing the grid. A second 18-element grid was fabricated, using this theory, with improved stability.

Additional Information

© 1995 IEEE. Date of Current Version: 06 August 2002. The authors would like to appreciate the support of Air Force Material Command/Rome Laboratory and Army Research Office.

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