Deep-ultraviolet transparent conducting SrSnO₃ via heterostructure design

Copyright and License

© 2024 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of
Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution
NonCommercial License 4.0 (CC BY-NC).

Acknowledgement

We thank R. Chakraborty for help with the training on the spectrophotometer.

Funding

Synthesis and characterization (F.L) were supported primarily by the Air Force Office of Scientific Research (AFOSR) through grants FA9550-21-1-0025 and FA9550-23-1-0247. Film growth was performed using instrumentation funded by AFOSR DURIP awards FA9550-18-1-0294 and FA9550-23-1-0085. D.A. and M.B. were supported by the AFOSR and Clarkson Aerospace under Grants No. FA9550-21-1-0460 and FA9550-24-1-0004. Part of the work was supported by the NSF through award numbers DMR-2306273 and DMR-2328702. D.A. was also partially supported by the NSF Graduate Research Fellowship under grant No. 2139433. Electrolyte gating (Z.Y.) was supported primarily by the UMN MRSEC program under award no. DMR-2011401. S.G. and K.A.M. were supported partially by the UMN MRSEC and NSF award no. DMR-2309431. Parts of this work were carried out at the Characterization Facility, University of Minnesota, which receives partial support from the NSF through UMNMRSEC. Portions of this work were carried out at the Minnesota Nano Center, which receives support from the NSF through the National Nanotechnology Coordinated Infrastructure (NNCI) under award no. ECCS-2025124. We also acknowledge partial support by the Nano & Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (RS-2024-00451699). Our calculations used resources of the National Energy Research Scientific Computing Center (NERSC), a U.S. Department of Energy Office of Science User Facility located at Lawrence Berkeley National Laboratory, operated under Contract No. DE-AC02-05CH11231.

Contributions

F.L., Z.Y., and B.J. conceived the idea and designed the experiments. F.L. grew the films. Z.Y. developed the fabrication process and performed gating experiments. F.L. and Z.Y. performed structural characterization and electrical testing. STEM/EDX measurements were performed by S.G. under the supervision of K.A.M. The first-principles calculations were performed by D.A. under the supervision of M.B. F.L., Z.Y., and B.J. wrote the manuscript. All authors contributed to the discussion and manuscript preparation. B.J. coordinated all aspects of the project.

Data Availability

All data needed to evaluate the conclusions of the paper are present in the paper and/or the Supplementary Materials. The Supplementary Materials contain additional details on the structural characterization using STEM of as-grown 4-nm SSO/19-nm La-doped SSO/GSO (110). Details of electrical transport measurements with and without gating plus the details of the calculations of accumulation-layer carrier density and mobility due to electrostatic modulation are included.

Supplemental Material

Supplementary Materials:

• Sections S1 to S10
• Figs. S1 to S9
• References