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Published May 1, 1983 | Version public
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Very low threshold InGaAsP mesa laser

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Abstract

Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have been fabricated on semi-insulating (SI) InP substrates. Fabrication of the lasers involves a single-step liquid phase epitaxial (LPE) growth and a simple etching process. Lasers operating in the fundamental transverse mode with threshold currents as low as 6.3 mA (for a cavity length of 250 μm) have been obtained. Comparison between the unpassivated lasers and those passivated using the mass transport technique is described.

Additional Information

© Copyright 1983 IEEE. Reprinted with permission. Manuscript received September 7, 1982; revised November 19, 1982. This work was supported by the National Science Foundation, the U.S. Office of Naval Research, and the U.S. Air Force Office of Scientific Research.

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9917
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CaltechAUTHORS:CHEieeejqe83

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http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=23045&arnumber=1071930 (URL)

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2008-03-27
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