CaltechAUTHORS
Published October 2016 | Version public
Book Section - Chapter Metadata-only

Direct growth of graphene on dielectric substrates: Epitaxy at incommensurate and reactive interfaces

Creators

  • 1. ROR icon University of North Texas
  • 2. ROR icon California Institute of Technology

Abstract

Direct growth of graphene by industrially scalable methods on suitable dielectric substrates is critical to the development of practical electronic and spintronic devices. Graphene growth by molecular beam epitaxy on the commensurate substrate h-BN(0001) and on other weakly interacting substrates has previously been demonstrated. We have been able to use MBE to grow graphene on incommensurate Co3O4(111), which we find involves formation of a deformed interfacial C layer due to some C atoms forming covalent bonds to oxide O sites, followed by epitaxial graphene growth in subsequent layers. These results suggest that similar graphene growth may be achievable on other p-type spinel-structured oxides, opening the door to new electronic or spintronic applications.

Additional Information

© 2016 IEEE. Peter Dowben is acknowledged for stimulating discussions. Work at UNT was supported in part by the NSF under grant no. ECCS-1508991, and in part by C­SPIN, a funded center of STARnet, a Semiconductor Research Corporation (SRC) program sponsored by MARCO and DARPA under task IDs 238l.001 and 238l.006. The research at Caltech was supported by the NSF (DMR-1436985) and DOE (DE-SC0014607).

Additional details

Identifiers

Eprint ID
80036
Resolver ID
CaltechAUTHORS:20170809-152211038

Funding

NSF
ECCS-1508991
C­SPIN
STARnet
Semiconductor Research Corporation
Microelectronics Advanced Research Corporation (MARCO)
Defense Advanced Research Projects Agency (DARPA)
2381.001
Defense Advanced Research Projects Agency (DARPA)
2381.006
NSF
DMR-1436985
Department of Energy (DOE)
DE-SC0014607

Dates

Created
2017-08-09
Created from EPrint's datestamp field
Updated
2021-11-15
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