Published June 2006
| Supplemental Material
Journal Article
Open
Silicon p-FETs from Ultrahigh Density Nanowire Arrays
Abstract
Statistical numbers of field-effect transistors (FETs) were fabricated from a circuit of 17-nm-wide, 34-nm-pitch Si nanowires boron doped at a level of 10^(18) cm^(-3). Top-gated 4-μm-wide Si nanowire p-FETs yielded low off-currents (∼10^(-12) A), high on/off ratios (10^5−10^6), good on current values (30 μA/μm), high mobilities (∼100 cm^2/V−s), and low subthreshold swing values (∼80 mV/decade between 10^(-12) and 10^(-10) A increasing to 200 mV/decade between 10^(-10)−10^(-8) A).
Additional Information
© 2006 American Chemical Society. Received 28 December 2005. Published online 2 May 2006. Published in print 1 June 2006. We thank A. Boukai, Y. Bunimovich, and K. Kan for their help in device fabrication and J. Green and Dr. E. Johnston-Halperin for their discussions. This work is supported by the DARPA MoleApps Program, the MARCO Center for Advanced Materials and Devices, and NSF-CCF-05204490.Attached Files
Supplemental Material - nl052558gsi20051228_010402.pdf
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Additional details
- Eprint ID
- 79821
- Resolver ID
- CaltechAUTHORS:20170803-093630552
- Defense Advanced Research Projects Agency (DARPA)
- Microelectronics Advanced Research Corporation (MARCO)
- NSF
- CCF-05204490
- Created
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2017-08-05Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field