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Published November 2020 | Published
Journal Article Open

Suspended Nanoscale Field Emitter Devices for High-Temperature Operation


In this work, we demonstrate suspended two- and four-terminal field emission devices for high-temperature operation. The planar structures were fabricated with tungsten on a 200-nm silicon nitride membrane. The insulator in the vicinity of the terminals was removed to minimize undesirable Frenkel–Poole emission and increase the resistance of leakage current pathways. The effects of temperatures up to 450 °C on Fowler–Nordheim emission characteristics and parasitic leakage resistance were studied. Turn-on voltages with magnitudes under 15 V that further decreased as a function of increasing temperature for the two-terminal device were reported. Gating at temperatures of 150 °C and 300 °C was shown for the four-terminal device, and corresponding transconductance and cutoff frequency values were computed.

Additional Information

© 2020 IEEE. This work is licensed under a Creative Commons Attribution 4.0 License. Manuscript received June 26, 2020; revised August 20, 2020; accepted August 24, 2020. Date of publication September 9, 2020; date of current version October 22, 2020. This work was supported in part by the NASA/ROSES HOTTECH Program 80HQTR17C0011 under a subcontract from the Boeing Company and in part by the President and Director's Fund at the California Institute of Technology and the Jet Propulsion Laboratory underAward 1614028. The review of this article was arranged by Editor M. Blank. The authors gratefully acknowledge many technical discussions and guidance from Dr. Leora Peltz and Robert Frampton from The Boeing Company. This research was carried out in part at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration.

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