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Published October 2000 | Published
Book Section - Chapter Open

Ultra Broadband Low Power MMIC Amplifier


A low power two-stage InP HEMT MMIC amplifier has been developed. The amplifier utilizes 0.12 μm T-gate InP HEMTs with 2×25 μm gate periphery. This compact microstrip MMIC is only 1.5 mm^2 in size. It exhibits gain of 12.5±1 dB at 15 mW of dissipated power over an operating range from 1 to 50 GHz. The gain-bandwidth/dissipation figure of merit is 40 dB GHz/mW. The average noise figure is 3 to 3.8 dB over the Ka band.

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© 2000 IEEE.

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