Ultra Broadband Low Power MMIC Amplifier
A low power two-stage InP HEMT MMIC amplifier has been developed. The amplifier utilizes 0.12 μm T-gate InP HEMTs with 2×25 μm gate periphery. This compact microstrip MMIC is only 1.5 mm^2 in size. It exhibits gain of 12.5±1 dB at 15 mW of dissipated power over an operating range from 1 to 50 GHz. The gain-bandwidth/dissipation figure of merit is 40 dB GHz/mW. The average noise figure is 3 to 3.8 dB over the Ka band.
Additional Information© 2000 IEEE.
Published - 04139743.pdf