Published August 6, 1952
| public
Journal Article
The Si—C Bond Distance in Si(CH_3)_4
- Creators
- Sheehan, W. F., Jr.
- Schomaker, Verner
Abstract
A reinvestigation of tetramethylsilane by electron diffraction has led to the result Si-C = 1.888 ± 0.02 Å. (previous report: 1.93 ± 0.03 Å.), in agreement with the values found for carborundum (1.88-1.90 Å.), the three other methylsilanes (1.87 Å.), and Si_2(CH_3)O_5 (1.90 ± 0.02 Å.).
Additional Information
© 1952 American Chemical Society. Received March 31, 1952.Additional details
- Alternative title
- The Si—C Bond Distance in Si(CH3)4
- Eprint ID
- 88254
- DOI
- 10.1021/ja01135a522
- Resolver ID
- CaltechAUTHORS:20180725-111210313
- Created
-
2018-07-25Created from EPrint's datestamp field
- Updated
-
2021-11-16Created from EPrint's last_modified field
- Other Numbering System Name
- Gates and Crellin Laboratories of Chemistry
- Other Numbering System Identifier
- 1671