Published June 2012
| public
Journal Article
Stacking faults and partial dislocations in graphene
- Creators
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Ariza, M. P.
- Serrano, R.
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Mendez, J. P.
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Ortiz, M.
Abstract
We investigate two mechanisms of crystallographic slip in graphene, corresponding to glide and shuffle generalized stacking faults (GSF), and compute their γ-curves using Sandia National Laboratories Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS). We find evidence of metastable partial dislocations for the glide GSF only. The computed values of the stable and unstable stacking-fault energies are suggestive of a high stability of full dislocations against dissociation and of dislocation dipoles against annihilation.
Additional Information
© 2012 Taylor & Francis. Received 3 August 2011; final version received 14 December 2011; Available online: 17 May 2012. We gratefully acknowledge the support of the Ministerio de Ciencia e Innovación of Spain (DPI2009-14305-C02-01) and the support of the Consejería de Innovación of Junta de Andalucía (P09-TEP-4493). Support for this study was also provided by the Department of Energy National Nuclear Security Administration under Award Number DE-FC52-08NA28613 through Caltech's ASC/PSAAP Center for the Predictive Modeling and Simulation of High Energy Density Dynamic Response of Materials.Additional details
- Eprint ID
- 32062
- DOI
- 10.1080/14786435.2012.657254
- Resolver ID
- CaltechAUTHORS:20120625-113231865
- Ministerio de Ciencia e Innovación (MCINN)
- DPI2009-14305-C02-01
- Consejería de Innovación of Junta de Andalucía
- P09-TEP-4493
- Department of Energy (DOE)
- DE-FC52-08NA28613
- Caltech ASC/PSAAP Center for the Predictive Modeling and Simulation of High-Energy Density Dynamic Response of Materials
- Created
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2012-06-25Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field