Published June 15, 1975
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Neutral impurity scattering in semiconductors
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Abstract
The drift mobility and ratio of Hall to drift mobility are computed for the scattering of carriers by a hydrogenic neutral impurity. The scattering is treated using the almost exact values of the phase shifts for scattering of electrons by neutral hydrogen scaled for the effective mass and dielectric constant of the semiconductor.
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©1975 The American Physical Society Received 2 December 1974 Work supported in part by Air Force Office of Scientific Research under Grant No. 73-2490. Alfred P. Sloan Foundation Fellow.Files
MCGprb75.pdf
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- CaltechAUTHORS:MCGprb75
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2006-03-28Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field