0.1 µm InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band

Creators: Grundbacher, R.; Lai, R.; Barsky, M.; Tsai, R.; Gaier, T.; Weinreb, S.; Dawson, D.; Bautista, J. J.; Davis, J. F.; Erickson, N.; Block, T.; Oki, A.

Abstract

We present the TRW 0.1 µm InP HEMT MMIC production technology that has been developed and used for state-of-the-art cryogenic LNA applications. The 0.1 µm InP HEMT devices typically show cutoff frequency above 200 GHz and transconductance above 1000 mS/mm. Aspects of device design and fabrication are presented which impact important parameters including the InP HEMT device gain, gate leakage current, and parasitic capacitance. One example of state-of-the-art cryogenic MMIC performance is a W-band cryogenic MMIC LNA operated at 20 degrees Kelvin that shows above 23 dB gain and a noise temperature of 30 to 40 K (0.45 to 0.6 dB noise figure) over the band of 80-105 GHz.

Additional Information

© 2002 IEEE. The authors acknowledge R. Dia, P. H. Liu, and P. Oliver for their support in this work. The authors also acknowledge the TRW labs and personnel: MBE, 3D, D1, EBL, backside, layout, RF test, and fixture test. This work was partially funded by the National Aeronautics and Space Administration (NASA), Breakthrough Sensors and Instrument Component Technologies Program. Portions of this work were performed at the California Institute of Technology, Jet Propulsion Laboratory under a contract with NASA

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