High Aspect Ratio Silicon Wire Array Photoelectrochemical Cells
Abstract
In an effort to develop low-cost solar energy conversion techniques, high uniformity vertically oriented silicon wire arrays have been fabricated. These arrays, which allow for radial diffusion of minority charge carriers, have been measured in a photoelectrochemical cell. Large photovoltages (∼400 mV) have been measured, and these values are significantly greater than those obtained from the substrate alone. Additionally, the wire array samples displayed much higher current densities than the underlying substrate, demonstrating that significant energy conversion was occurring due to the absorption and charge-carrier transport in the vertically aligned Si wires. This method therefore represents a step toward the use of collection-limited semiconductor materials in a wire array format in macroscopic solar cell devices.
Additional Information
© 2007 American Chemical Society. Received July 3, 2007. Publication Date (Web): September 25, 2007. This work was supported by BP and by the Department of Energy, Office of Basic Energy Sciences. This work was supported in part by the Center for Science and Engineering Materials, an NSF Materials Research Science and Engineering Center at Caltech. We acknowledge T. Mallouk and J. Redwing of Penn State for helpful discussions and for providing a preprint of their work, done concurrently, on Si nanowire arrays.Attached Files
Supplemental Material - ja074897csi20070910_021947.pdf
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Additional details
- Eprint ID
- 76832
- DOI
- 10.1021/ja074897c
- Resolver ID
- CaltechAUTHORS:20170421-155914069
- BP
- Department of Energy (DOE)
- NSF
- Created
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2017-04-24Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field