Published July 15, 1978
| Version public
Journal Article
Open
Epitaxial growth of deposited amorphous layer by laser annealing
Abstract
We demonstrate that a single short pulse of laser irradiation of appropriate energy is capable of recrystallizing in open air an amorphous Si layer deposited on a (100) single-crystal substrate into an epitaxial layer. The laser pulse annealing technique is shown to overcome the interfacial oxide obstacle which usually leads to polycrystalline formation in normal thermal annealing.
Additional Information
Copyright © 1978 American Institute of Physics. Received 20 March 1978; accepted for publication 9 May 1978. We acknowledge the valuable discussion with Dr. J. O. McCaldin and the partial financial support of the Office of Naval Research (L. Cooper).Files
LAUapl78a.pdf
Files
(190.5 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:3ff8ba223c7319b2df75c482cde22b37
|
190.5 kB | Preview Download |
Additional details
Identifiers
- Eprint ID
- 3916
- Resolver ID
- CaltechAUTHORS:LAUapl78a
Dates
- Created
-
2006-07-19Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field