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Published July 15, 1978 | public
Journal Article Open

Epitaxial growth of deposited amorphous layer by laser annealing


We demonstrate that a single short pulse of laser irradiation of appropriate energy is capable of recrystallizing in open air an amorphous Si layer deposited on a (100) single-crystal substrate into an epitaxial layer. The laser pulse annealing technique is shown to overcome the interfacial oxide obstacle which usually leads to polycrystalline formation in normal thermal annealing.

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Copyright © 1978 American Institute of Physics. Received 20 March 1978; accepted for publication 9 May 1978. We acknowledge the valuable discussion with Dr. J. O. McCaldin and the partial financial support of the Office of Naval Research (L. Cooper).


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