Published April 1980
| Published
Journal Article
Open
Low threshold Be implanted (GaAl)As laser on semi-insulating substrate
Abstract
Be implanted stripe geometry double heterostructure lasers have been fabricated on a semi-insulating GaAs substrate, with threshold currents as low as 15 mA for a cavity length of 100 μm. The laser has been monolithically integrated with a metal-semiconductor field-effect transistor.
Additional Information
© 1980 IEEE. Manuscript received December 13, 1979. This work was supported in part by the Office of Naval Research and the National Science Foundation.Attached Files
Published - WILieeejqe80.pdf
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Additional details
- Eprint ID
- 32658
- Resolver ID
- CaltechAUTHORS:20120724-080910932
- Office of Naval Research (ONR)
- NSF
- Created
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2012-07-25Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field