Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published April 1980 | Published
Journal Article Open

Low threshold Be implanted (GaAl)As laser on semi-insulating substrate


Be implanted stripe geometry double heterostructure lasers have been fabricated on a semi-insulating GaAs substrate, with threshold currents as low as 15 mA for a cavity length of 100 μm. The laser has been monolithically integrated with a metal-semiconductor field-effect transistor.

Additional Information

© 1980 IEEE. Manuscript received December 13, 1979. This work was supported in part by the Office of Naval Research and the National Science Foundation.

Attached Files

Published - WILieeejqe80.pdf


Files (619.2 kB)
Name Size Download all
619.2 kB Preview Download

Additional details

August 19, 2023
October 18, 2023