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Published September 2010 | Version Published
Journal Article Open

A Molecular-Rotor Device for Nonvolatile High-Density Memory Applications

Creators

  • 1. ROR icon California NanoSystems Institute
  • 2. ROR icon California Institute of Technology

Abstract

A novel memory device based on an electrically driven molecular rotor was fabricated and demonstrated to have bistable switching effects. The device showed an on/off ratio of approximately 10^4, a read window of about 2.5 V, and retention performance of greater than 10^4 s. The analysis of the device I–V characteristics suggests the source of the observed switching effects to be the redox-induced ligand rotation around the copper metal center, which is consistent with the observed temperature dependence of the switching behavior. This organic monolayer device holds a potential for nonvolatile high-density memory applications due to its scalability and reduced cost.

Additional Information

© 2010 IEEE. Manuscript received May 17, 2010; accepted May 26, 2010. Date of publication July 19, 2010; date of current version August 25, 2010. This work was supported by the FCRP-FENA Center. The review of this letter was arranged by Editor T. Wang.

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Additional details

Identifiers

Eprint ID
20741
Resolver ID
CaltechAUTHORS:20101110-110530178

Funding

Focus Center Research Program-The Center on Functional Engineered Nano Architectonics Center (FENA-FCRP Center)

Dates

Created
2010-11-11
Created from EPrint's datestamp field
Updated
2021-11-09
Created from EPrint's last_modified field

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INSPEC Accession Number
Other Numbering System Identifier
11477412