Dynamic light manipulation via silicon-organic slot metasurfaces
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1.
California Institute of Technology
Abstract
Active metasurfaces provide the opportunity for fast spatio-temporal control of light. Among various tuning methods, organic electro-optic materials provide some unique advantages due to their fast speed and large nonlinearity, along with the possibility of using fabrication techniques based on infiltration. In this letter, we report a silicon-organic platform where organic electro-optic material is infiltrated into the narrow gaps of slot-mode metasurfaces with high quality factors. The mode confinement into the slot enables the placement of metallic electrodes in close proximity, thus enabling tunability at lower voltages. We demonstrate the maximum tuning sensitivity of 0.16nm/V, the maximum extinction ratio of 38% within ± 17V voltage at telecommunication wavelength. The device has 3dB bandwidth of 3MHz. These results provide a path towards tunable silicon-organic hybrid metasurfaces at CMOS-level voltages.
Copyright and License
© The Author(s) 2024. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
Acknowledgement
We thank NLM Photonics for the HLD OEO material and for consulting on the preparation and poling process of the HLD. The device nanofabrication was performed at the Kavli Nanoscience Institute at Caltech. This work was supported by the Caltech Sensing to Intelligence program and ARO W911NF2210097. H.K. acknowledges a fellowship from Ilju organization.
Contributions
These authors contributed equally: Tianzhe Zheng and Yiran Gu.
Contributions
H.K., T.Z. and A.F. conceived the project. A.F. supervised the project. H.K and T.Z. designed the structures. T.Z. and Y.G. fabricated devices, performed simulations and measurements, and analyzed data. T.Z. designed and prepared the printed circuit boards. G.R. provided feedback on the design of the structures. T.Z. wrote the manuscript. All authors discussed the results and commented on the manuscript.
Data Availability
The data that support the findings of this study are available from the corresponding author upon request.
Conflict of Interest
The authors declare the existence of the following financial competing interest: T.Z, Y.G, H.K., and A.F. have filed for a patent application (number: 18/189074) based on the results of this paper. There are no other competing interests.
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Additional details
- PMCID
- PMC10879521
- United States Army Research Office
- W911NF2210097
- Caltech groups
- Kavli Nanoscience Institute, Institute for Quantum Information and Matter