Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published August 2005 | Published
Journal Article Open

Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP


The motion and bonding configurations of hydrogen in InP are studied after proton implantation and subsequent annealing, using Fourier transform infrared (FTIR) spectroscopy. It is demonstrated that, as implanted, hydrogen is distributed predominantly in isolated pointlike configurations with a smaller concentration of extended defects with uncompensated dangling bonds. During annealing, the bonded hydrogen is released from point defects and is recaptured at the peak of the distribution by free internal surfaces in di-hydride configurations. At higher temperatures, immediately preceding exfoliation, rearrangement processes lead to the formation of hydrogen clusters and molecules. Reported results demonstrate that the exfoliation dynamics of hydrogen in InP and Si are markedly different, due to the higher mobility of hydrogen in InP and different implant-defect characteristics, leading to fundamental differences in the chemical mechanism for exfoliation.

Additional Information

© 2005 The American Physical Society (Received 4 March 2005; revised 27 May 2005; published 24 August 2005)

Attached Files

Published - MORprb05.pdf


Files (548.8 kB)
Name Size Download all
548.8 kB Preview Download

Additional details

August 22, 2023
October 13, 2023