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Published February 6, 1995 | Published
Journal Article Open

Electroluminescence and photoluminescence of Ge-implanted Si/SiO_2/Si structures


Electroluminescent devices were fabricated in SiO_2 films containing Ge nanocrystals formed by ion implantation and precipitation during annealing at 900 °C, and the visible room‐temperature electroluminescence and photoluminescence spectra were found to be broadly similar. The electroluminescent devices have an onset for emission in reverse bias of approximately −10 V, suggesting that the mechanism for carrier excitation may be an avalanche breakdown caused by injection of hot carriers into the oxide. The electroluminescent emission was stable for periods exceeding 6 h.

Additional Information

© 1995 American Institute of Physics. Received 28 June 1994; accepted for publication 30 November 1994. This work was supported by the U.S. Department of Energy under Grant DE-FG03-89ER45395. One of us (K.V.S.) acknowledges support from a J.S. Fluor Foundation Fellowship.

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