Published June 1989
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Quasi-optical watt-level millimeter-wave monolithic solid-state diode-grid frequency multipliers
Abstract
A monolithic planar array containing thousands of GaAs Barrier-Intrinsic-N^+ diodes have produced one watt output power at 100 GHz in a tripler configuration. Tripling efficiency of 8.5% has been obtained from approximately 4-mW incident power on each diode, in excellent agreement with the predictions of large-signal nonlinear circuit analysis of frequency multiplication. The device performance is limited by the parameters of the fabricated diodes. Significant improvement is expected with realizable diode parameters and optimized pumping condition.
Additional Information
© 1989 IEEE. Date of Current Version: 06 August 2002. This work was supported by TRW under the California MICRO program.Attached Files
Published - HWUims89.pdf
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Identifiers
- Eprint ID
- 31628
- Resolver ID
- CaltechAUTHORS:20120524-095106887
Funding
- TRW California MICRO Program
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2012-05-24Created from EPrint's datestamp field
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2022-10-27Created from EPrint's last_modified field