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Published November 29, 2010 | Published
Journal Article Open

Conformal GaP layers on Si wire arrays for solar energy applications


We report conformal, epitaxial growth of GaP layers on arrays of Si microwires. Silicon wires grown using chlorosilane chemical vapor deposition were coated with GaP grown by metal-organic chemical vapor deposition. The crystalline quality of conformal, epitaxial GaP/Si wire arrays was assessed by transmission electron microscopy and x-ray diffraction. Hall measurements and photoluminescence show p- and n-type doping with high electron mobility and bright optical emission. GaP pn homojunction diodes on planar reference samples show photovoltaic response with an open circuit voltage of 660 mV.

Additional Information

© 2010 American Institute of Physics. Received 20 June 2010; accepted 10 November 2010; published online 3 December 2010. Funding for this work was provided by DARPA and the Caltech Center for Sustainable Energy Research. D.B.T.-E. acknowledges fellowship support from the NSF. The authors thank Nick Strandwitz, Carrie Hofmann, Carol Garland, and Emily Warmann for assistance with GaP processing and characterization.

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Published - Tamboli2010p12286Appl_Phys_Lett.pdf


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