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Published October 2008 | Supplemental Material
Journal Article Open

Secondary ion mass spectrometry of vapor−liquid−solid grown, Au-catalyzed, Si wires


Knowledge of the catalyst concentration within vapor-liquid-solid (VLS) grown semiconductor wires is needed in order to assess potential limits to electrical and optical device performance imposed by the VLS growth mechanism. We report herein the use of secondary ion mass spectrometry to characterize the Au catalyst concentration within individual, VLS-grown, Si wires. For Si wires grown by chemical vapor deposition from SiCl_4 at 1000 °C, an upper limit on the bulk Au concentration was observed to be 1.7 x 10^16 atoms/cm^3, similar to the thermodynamic equilibrium concentration at the growth temperature. However, a higher concentration of Au was observed on the sidewalls of the wires.

Additional Information

© 2008 American Chemical Society. Received April 30, 2008; Revised Manuscript Received July 18, 2008. The authors thank BP and the Caltech Center for Sustainable Energy Research for support and acknowledge use of facilities of the Center for the Science of Materials, an NSF MRSEC. The authors also thank Jen Dionne for SEM support. Supporting Information Available: Further experimental details, sputtering volumes, and count rates. This material is available free of charge via the Internet at http://pubs.acs.org.

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August 22, 2023
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