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Published August 1, 1978 | public
Journal Article Open

Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiation


We demonstrate that a single short pulse of electron irradiation of appropriate energy is capable of recrystallizing epitaxially an amorphous Ge layer deposited on either <100> or <111> Si single-crystal substrate. The primary defects observed in the <100> case were dislocations, whereas stacking faults were observed in <111> samples.

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© 1978 American Institute of Physics. Received 10 April 1978; accepted for publication 29 May 1978. The Caltech group acknowledges the partial financial support of the Office of Naval Research (L. Cooper).


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