Published August 1, 1978
| Version public
Journal Article
Open
Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiation
Abstract
We demonstrate that a single short pulse of electron irradiation of appropriate energy is capable of recrystallizing epitaxially an amorphous Ge layer deposited on either <100> or <111> Si single-crystal substrate. The primary defects observed in the <100> case were dislocations, whereas stacking faults were observed in <111> samples.
Additional Information
© 1978 American Institute of Physics. Received 10 April 1978; accepted for publication 29 May 1978. The Caltech group acknowledges the partial financial support of the Office of Naval Research (L. Cooper).Files
LAUapl78b.pdf
Files
(210.4 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:1557d3c0655431fbc0aa153a0abe36ae
|
210.4 kB | Preview Download |
Additional details
Identifiers
- Eprint ID
- 7232
- Resolver ID
- CaltechAUTHORS:LAUapl78b
Dates
- Created
-
2007-01-25Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field