CaltechAUTHORS
Published May 2021 | Version Published
Book Section - Chapter Open

Hertz-level-linewidth semiconductor laser via injection locking to an ultra-high Q silicon nitride microresonator

Creators

Abstract

A conventional semiconductor DFB laser is self-injection-locked to a CMOS-foundry- fabricated ultra-high Q silicon nitride microresonator, suppressing high-offset frequency noise to 0.2 Hz² Hz⁻¹ and yielding instantaneous linewidth of 1.2 Hz.

Additional Information

© 2021 The Author(s). This work is supported by the Defense Advanced Research Projects Agency, DARPA (HR0011-15-C-055, FA9453-19-C-0029) and Anello Photonics.

Attached Files

Published - Hertz-level-linewidth_semiconductor_laser_via_injection_locking_to_an_ultra-high_Q_silicon_nitride_microresonator.pdf

Files

Hertz-level-linewidth_semiconductor_laser_via_injection_locking_to_an_ultra-high_Q_silicon_nitride_microresonator.pdf

Files (1.3 MB)

Additional details

Identifiers

Eprint ID
112764
Resolver ID
CaltechAUTHORS:20220106-104652400

Related works

Is published in
https://ieeexplore.ieee.org/document/9572355 (URL)

Funding

Defense Advanced Research Projects Agency (DARPA)
HR0011-15-C-055
Defense Advanced Research Projects Agency (DARPA)
FA9453-19-C-0029
Anello Photonics

Dates

Created
2022-01-09
Created from EPrint's datestamp field
Updated
2022-01-09
Created from EPrint's last_modified field