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Published August 1, 2013 | public
Journal Article

SiGe Quantum Dots Over Si Pillars for Visible to Near-Infrared Broadband Photodetection


We demonstrate a successful selective growth of Si_(0.3)Ge_(0.7) quantum dots (QDs) over array of p+-Si nanopillars using a low-pressure chemical vapor deposition technique, and hereafter realized high-performance QD broadband photodiodes for visible to near-infrared photodetection based on heterostructures of indium tin oxide/Si_(0.3)Ge_(0.7) QD/Si pillar. Thanks to effective hole confinement and thus a built-in electric field within the SiGe QD, high ratios of photocurrent to dark current of ~2200, 100, and 30, respectively, were measured on our SiGe QDs-based photodiodes under illumination of 9 mW/cm^2 at wavelength of 500-800, 1300, and 1500 nm. The QD photodiode exhibits a very low dark current density of 3.2 × 10^(-8) A/cm^2 and a tunable power-dependent linearity by applied voltage through the competition of electron drift and carrier recombination processes.

Additional Information

© 2013 IEEE. Manuscript received April 3, 2013; revised May 15, 2013 and June 5, 2013; accepted June 17, 2013. Date of publication June 20, 2013; date of current version July 17, 2013. This work was supported in part by the National Science Council of Taiwan under Grant NSC 101-3113-P-008-008 and in part by the Dragon-gate program under Grants NSC 99-2911-I-008-003 and NSC 100-2911-I-008-018.

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