Published November 11, 2000
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MMIC low-noise amplifiers and applications above 100 GHz
Abstract
In this paper we will present recent work on low noise amplifiers developed for very high frequencies above 100 GHz. These amplifiers were developed with a unique InP-based HEMT MMIC process. The amplifiers have been developed for both cryogenic and room temperature amplifier applications with state-of-art performance demonstrated from 100 GHz to 215 GHz.
Additional Information
© 2000 IEEE. The authors would like to acknowledge Lorene Samoska and other technical members from JPL, Sam Esparza, Bruce Osgood, for on-wafer and fixture testing of wafers and parts, Liem Tran, Rosie Dia, Rita Rodriguez and members of the fabrication team for InP wafer fabrication. We would like to acknowledge Barry Allen for the advice and guidance for this work. We would like to acknowledge the several key MMlC designers for their contribution including T.W. Huang, Yon-Lin Kok and Huei WangAttached Files
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