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Published May 31, 2004 | public
Journal Article Open

Organic field-effect transistors with nonlithographically defined submicrometer channel length


We developed an underetching technique to define submicrometer channel length polymer field-effect transistors. Short-channel effects are avoided by using thin silicon dioxide as gate insulator. The transistors with 1 and 0.74 mum channel length operate at a voltage as low as 5 V with a low inverse subthreshold slope of 0.4-0.5 V/dec, on-off ratio of 10(4), and without short-channel effects. The poly(3-alcylthiophene)'s still suffer from a low mobility and hysteresis does occur, but it is negligible for the drain voltage variation. With our underetching technique also device structures with self-aligned buried gate and channel length below 0.4 mum are fabricated on polymer substrates.

Additional Information

Copyright © 2004 American Institute of Physics. Received 3 December 2003; accepted 6 April 2004; published online 12 May 2004.


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