Synthesis and surface chemistry of Zn_3P_2
Abstract
Zinc phosphide (Zn_3P_2) is a promising alternative to traditional materials (e.g. CIGS, CdTe, a-Si) for thin film photovoltaics. Open circuit voltage in Zn_3P_2 cells has been limited by Fermi-level pinning due to surfaces states and heterojunction interdiffusion, motivating the need to prepare interfaces that are electrically passive and chemically inert. We investigated the surface chemistry of Zn_3P_2 via etching with bromine in methanol and passivation with ammonium sulfide in t-butanol. The treatment decreases surface oxidation as determined by x-ray photoelectron spectroscopy and provides a stable, low-defect interface as monitored by steady-state photoluminescence. Magnesium Schottky diodes fabricated with sulfur-passivated interfaces show evidence of enhanced barrier heights in comparison to control devices.
Additional Information
© 2008 IEEE. This work was supported by the Office of Energy Efficiency and Renewable Energy, US Department of Energy under grant DE-FG36-08G018006. One of us (GMK) acknowledges support under an NDSEG graduate fellowship. We also acknowledge use of facilities supported by the Center for Science and Engineering of Materials, an NSF MRSEC.Attached Files
Published - 04922747.pdf
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Additional details
- Eprint ID
- 75760
- Resolver ID
- CaltechAUTHORS:20170405-165832245
- Department of Energy (DOE)
- DE-FG36-08G018006
- National Defense Science and Engineering Graduate (NDSEG) Fellowship
- NSF
- Created
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2017-04-06Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field