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Published May 1, 1993 | Published
Journal Article Open

n-CdSe/p-ZnTe based wide band-gap light emitters: Numerical simulation and design


The only II‐VI/II‐VI wide band‐gap heterojunction to provide both good lattice match and p‐ and n‐type dopability is CdSe/ZnTe. We have carried out numerical simulations of several light emitter designs incorporating CdSe, ZnTe, and Mg alloys. In the simulations, Poisson's equation is solved in conjunction with the hole and electron current and continuity equations. Radiative and nonradiative recombination in bulk material and at interfaces are included in the model. Simulation results show that an n‐CdSe/p‐ZnTe heterostructure is unfavorable for efficient wide band‐gap light emission due to recombination in the CdSe and at the CdSe/ZnTe interface. An n‐CdSe/Mg_(x)Cd_(1−x)Se/p‐ZnTe heterostructure significantly reduces interfacial recombination and facilitates electron injection into the p‐ZnTe layer. The addition of a Mg_(y)Zn_(1−y)Te electron confining layer further improves the efficiency of light emission. Finally, an n‐CdSe/Mg_(x)Cd_(1−x)Se/Mg_(y)Zn_(1−y)Te/p‐ZnTe design allows tunability of the wavelength of light emission from green into the blue wavelength regime.

Additional Information

© 1993 American Institute of Physics. Received 13 August 1992; accepted 4 January 1993. The author wishes to thank Y. X. Liu, R. R. Marquardt, and D. Z.-Y. Ting for many useful discussions. One of us (E.T. Yu) would like to acknowledge financial support from the AT&T Foundation. This work was supported by the Office of Naval Research under Grant No. N00014-90-J-1742.

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