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Published May 1967 | Submitted
Journal Article Open

Basal dislocation mobility in zinc single crystals


Experimental measurements of basal dislocation mobility and the strain-rate sensitivity of the flow stress have been made on 99.999% pure zinc single crystals. Dislocation mobility in the [1210] (0001) basal slip system was measured by observing slip band growth produced by load pulses of controlled amplitude and duration. Local rearrangement of dislocations occurs at a resolved stress of 7 lb./in.^2. Slip bands are formed at stresses greater than 7 lb./in.^2, and their growth velocities are in the range of 7 to 80 cm/sec for shear stresses between 7 and 12 lb./in.^2. The results of the experimental measurements of dislocation mobility are discussed in relation to current theories. A comparison of the strain-rate sensitivity and the mobility measurements shows that a significant change in the density of moving dislocations is associated with a change in strain-rate. This change in density has generally been ignored by previous investigators. A dislocation model is proposed to explain the observed strain-rate sensitivity.

Additional Information

© 1967 Elsevier Publishing Company. Received November 14, 1966; revised March 6, 1967. The authors wish to express their appreciation to the U.S. Atomic Energy Commission for sponsorship of this work under Contract No. AT (04-3)-473. The invaluable assistance of A. P. L. Turner and R. C. Blish in specimen preparation, testing and data analysis is gratefully acknowledged.

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