Published November 15, 1979
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Journal Article
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A monolithically integrated optical repeater
Abstract
A monolithically integrated optical repeater has been fabricated on a single-crystal semi-insulating GaAs substrate. The repeater consists of an optical detector, an electronic amplifier, and a double heterostructure crowding effect laser. The repeater makes use of three metal semiconductor field effect transistors, one of which is used as the optical detector. With light from an external GaAlAs laser incident on the detector, an overall optical power gain of 10 dB from both laser facets was obtained.
Additional Information
Copyright © 1979 American Institute of Physics. (Received 13 August 1979; accepted for publication 11 September 1979) This work was supported by the Office of Naval Research and the National Science Foundation. The work of one of the authors (SHI) was supported by the Iran Ministry of Higher Education.Files
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- 10825
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- CaltechAUTHORS:YUSapl79
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2008-06-12Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field