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Published October 7, 2002 | Published
Journal Article Open

Low-threshold photonic crystal laser


We have fabricated photonic crystal nanocavity lasers, based on a high-quality factor design that incorporates fractional edge dislocations. Lasers with InGaAsP quantum well active material emitting at 1550 nm were optically pumped with 10 ns pulses, and lased at threshold pumping powers below 220 µW, the lowest reported for quantum-well based photonic crystal lasers, to our knowledge. Polarization characteristics and lithographic tuning properties were found to be in excellent agreement with theoretical predictions.

Additional Information

© 2002 American Institute of Physics. Received 19 June 2002; accepted 9 August 2002. The authors would like to thank William Green from Caltech for many valuable discussions. This work was supported by the NSF under Grants Nos. ECS-9912039 and DMR-0103134, and the AFOSR Contract No. F49620-01-1-0497. Two of the authors (P.G. and Y.Q.) would like to acknowledge the partial support from the Cross Enterprise Technology Development Program at the Jet Propulsion Laboratory (under a contract with the National Aeronautics and Space Administration).

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