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Published January 15, 2013 | public
Journal Article

Pseudomorphic growth and strain relaxation of α-Zn_(3)P_(2) on GaAs(001) by molecular beam epitaxy


Tetragonal zinc phosphide (α-Zn3P2) was grown pseudomorphically, by compound-source molecular-beam epitaxy on GaAs(001). The films grew coherently strained, with epitaxial relationships of Zn_(3)P_(2)(004)‖GaAs(002) and Zn_(3)P_(2)(202)‖GaAs(111). Partial relaxation of the Zn3P2 lattice was observed for films that were >150 nm in thickness. Van der Pauw and Hall effect measurements indicated that the films were intrinsically p-type, presumably due to the incorporation of phosphorus interstitials. The carrier mobilities in strained films (>40 cm^2 V^(−1) s^(−1)) were comparable to the carrier mobilities that have been reported for bulk Zn_(3)P_(2) single crystals. The carrier densities and mobilities of holes decreased significantly upon film relaxation, consistent with the evolution of compensating dislocations.

Additional Information

© 2012 Elsevier B.V. Received 10 January 2012; Received in revised form 6 September 2012; Accepted 21 October 2012; Communicated by A.Brown Available online 3 November 2012. This work was supported by the Dow Chemical Company and by the Department of Energy, Office of Basic Energy Sciences under Grant no. DE-FG02-03ER15483. The authors would like to thank Steve Rozeveld for his assistance with the TEM and SAED measurements. J.P.B. acknowledges support under an NSF graduate research fellowship, and G.M.K. acknowledges support under an NDSEG fellowship.

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