Published June 18, 1992
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Journal Article
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Formation of Low Threshold Voltage Microlasers
Abstract
Vertical cavity surface emitting lasers (VCSELs) with threshold voltages of 1.7V have been fabricated. The resistance-area product in these new vertical cavity lasers is comparable to that of edge-emitting lasers, and threshold currents as low as 3 mA have been measured. Molecular beam epitaxy was used to grow n-type mirrors, a quantum well active region, and a heavily Be-doped p-contact. After contact definition and alloying, passive high-reflectivity mirrors were deposited by reactive sputter deposition of SiO2/Si3N4 to complete the laser cavity.
Additional Information
©1992 IEE. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE. The authors wish to thank E. Kapon, B. P. Van der Gaag and R. J. Martin for their assistance.Files
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2005-06-21Created from EPrint's datestamp field
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